? 0.15) is epitaxially grown with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the framework is cycled via oxidizing and annealing levels. Due to preferential oxidation of Si above Ge [sixty eight], the original Si1–Nghiên c?u c?a FDA ??a ra k?t lu?n r?ng germani, khi s? ??ng nh? là ch?t b? sung di